Novel methods to generate high mobility graphene
Chih-I Wu1*
1Graduate Institute of, Photonics and Optoeletronics, Taipei, Taiwan
* presenting author:Chih-I Wu,
The electronic, thermal and mechanical properties of graphene and its compatibility with two-dimensional lithographic techniques are ideal for many nano-electronic, spintronic and mechanical applications. Graphene is also promising for large-area optoelectronic devices such as touch screen displays and electrodes for photovoltaic cells and light emitting diodes. A major challenge to fully realize the potential of graphene-based technologies is to reproducibly fabricate large-area high-quality graphene. Here we show the superior properties of graphenes grown with a new method that produces high-quality monolayer graphene on copper in a single step at room temperature (RT) without active heating. Studies of these samples by scanning tunneling microscopy (STM) and Raman spectroscopy confirm excellent crystalline quality and much reduced strain of the RT-grown graphene on Cu foils, Cu (100) and Cu (111) single crystals relative to samples grown by thermal CVD techniques at 1000 C. Atomic force microscopy (AFM) studies also revealed large grains of the RT-grown graphene, typically > 25 m2. Electrical mobility determined by the field-effect-transistor (FET) configuration exhibited consistently high values, up to 60,000 cm2/V-s on BN at 300 K, exceeding the best values reported for thermal-CVD grown graphene that was transferred to BN, post-annealed and measured at 4.2 K. Our findings shed light on the growth kinetics of graphene and open up a new pathway to large-scale, superior-quality and inexpensive fabrication for scientific research and technological applications.

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