Directing electrons in graphene: From basic symmetry properties to a new transistor concept
L. Daniel Gunlycke1*
1Chemistry Division, Naval Research Laboratory, Washington, USA
* presenting author:L. Daniel Gunlycke, email:daniel.gunlycke@nrl.navy.mil
Graphene is a promising material for future nanoelectronic applications with its atomically thin planar structure ideal for high-density applications and exceptional conduction properties minimizing costly power dissipation. Even at room-temperature, electron and hole carriers in graphene could travel past 10,000 atoms, on average, without being scattered, a property matched by few if any other materials.The roadblock for graphene nanoelectronics has been the inability to controllably switch off this exceptional conduction. One solution is to introduce nanoscale interfaces within graphene that create boundary conditions that block conduction of low-energy carriers through quantum interference. A switchable device can then be achieved by electrostatically gating this structure. The interfaces in this graphene resonant tunneling transistor could be realized by structural defects, including the extended 5-5-8 line defect observed in graphene.


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