The electronic properties of SnTe thin films with doping impurities
Chi-Hsuan Lee1*, Chih-Kai Yang1
1Graduate Institute of Applied Physics, National Chengchi University, Taipei city, Taiwan
* presenting author:Chi-Hsuan Lee, email:chl00@nccu.edu.tw
The electronic properties of SnTe films doped by impurities are calculated by using density functional calculations. The spin-orbit coupling is also considered. There are surface states cross the Fermi level in SnTe bulk. In thin SnTe films, the surface states open an energy gap, but the energy gap decreases by doping impurities in surfaces of the films. Furthermore, the two surface states are also split. The impurities with magnetic moment can break the mirror-symmetry.


Keywords: electronic properties