Efficient carrier transfer from grapheme quantum dots to GaAs epilayers
C. W. Kao2*, T. N. Lin1, J. L. Shen1
1Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan
2Master Program in Nanotechnology, Chung Yuan Christian University, Chung-Li, Taiwan
* presenting author:Chiwei Kao, email:stan8951@gmail.com
Plused laser ablation was used to synthesize grapheme quantum dots (GQDs) from graphene flakes. By depositing the synthesized GQDs on the GaAs surface we were able to enhance the photoluminescence (PL) of GaAs epilayers by a factor of 2.1. The maximum increase in the PL intensity was obtained at GQD concentration of 0.84 mgml^(-1). The enhancement is due to the carrier transfer from GQDs to GaAs which is proven by their work function difference.


Keywords: grapheme quantum dots (GQDs), enhance, carrier transfer