Investigation of defect-induced abnormal body current in fin field-effecttransistors
劉冠汝1*, 陳俐卉2
1物理系, 國立中山大學, 高雄, Taiwan
2光電系, 國立中山大學, 高雄, Taiwan
* presenting author:Kuan Ju Liu, email:jaime.78726@hotmail.com
This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by
impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal.


Keywords: FinFET, MOSFET, body current, defect