Crystal Growth and Superconductivity Derived from Cu intercalation of Topological Insulator Cu0.3Bi2Se3
Shih-Hsun Yu1,2,3*, Te-Chih Hsiung3, Mitch M. C. Chou1,2, Yang-Yuan Chen3,4
1Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
2NSC Taiwan Consortium of Emergent Crystalline Materials, National Sun Yat-Sen University, Kaohsiung, Taiwan
3Institute of Physics, Academia Sinica, Nankang, Taiwan
4Graduate Institute of Applied Physics, National Chengchi University, Taipei, Taiwan
* presenting author:Shih-Hsun Yu,
The three-dimensional (3D) topological insulators (TIs) have received considerable attention during the past few years. TI materials are the new promising candidates for realization of the novel state quantum matters and Majorana fermions. Recently, many TI materials including Bi1-xSbx alloys, Bi2Se3, Bi2Te3, and Sb2Te3 compounds were discovered by different research groups. The superconductivity recently found in the doped topological insulator CuxBi2Se3 offers a great opportunity to search for a topological superconductor. Herein, we report the single crystal growth and superconductivity behavior derived from TI material, Cu0.3Bi2Se3. In this study, we have successfully prepared a single crystal by homemade molten growth method. Meanwhile, electrical transport and magnetic susceptibility measurement were performed on the samples. The transition of superconducting behavior at Tc = 3.2 K is induced by copper (Cu) intercalating into the van der Waals gaps between Bi2Se3 layers, which naturally forms topological quintuple layers (QLs). Thus, the concentration of copper dopant plays an important role which not only affects the quality of crystal but also alters the characteristic of superconductivity. Overview of above arguments, Cu0.3Bi2Se3 possess the unique TIs property and gradually increase potential of various applications in the future.

Keywords: Topological insulators (TIs), Superconductivity