Triangular MoS2 Field Effect Transistor
Jyun-Hong Chen1, Shi-Xian Guan1*, Yuan-Liang Zhong1
1Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
* presenting author:Shi-Xian Guan, email:mr.nightcat@gmail.com
Semiconducting transition-metal dichalcogenides, MoS2, is a novel material as a channel material of field-effect transistors (FETs). We have synthesized single-crystal MoS2 by using chemical vapor deposition method and fabricated FET with back and side gates on silicon-dioxide substrate. Triangular MoS2 FET was applied by different direct electric fields (in-plane and out plane) for measuring current-voltage curves to study the characteristic of devices and the electron transport mobility. The temperature dependence of mobility follows a μ ~ Tγ with γ = 1.62 and 1.73 for side and back gate at closed to room temperature, above ~170 K. This temperature dependence behavior has been predicted in theory by a model of the intrinsic phonon-limited mobility via dielectric engineering due to the strong suppression of charged-impurity scattering.


Keywords: MoS2, FET