Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene
Yow-Jon Lin (林祐仲)1*, Cheng-Chun Hung (洪承群)1, Jian-Jhou Zeng (曾建洲)1
1Institute of Photonics, National Changhua University of Education, Changhua, Taiwan
* presenting author:Yow-Jon Lin, email:rzr2390@yahoo.com.tw
The extrinsic and intrinsic performance effects on the electrical property of few-layer graphene (FLG) are investigated. This study uses the ultraviolet irradiation technique to tune the electrical parameters of FLG for analyzing the extrinsic/intrinsic contribution to the electrical conductivity. A correlation between the temperature-dependent electrical properties, phonon and impurity scatterings, and thermal activation of charge carriers is identified in this study. The observed temperature evolution of resistivity is understood from the competition among the phonon scattering and impurity scattering effects and thermal activation of charge carriers. It is important to identify the carrier transport behavior for enhancing the FLG-based device performance.


Keywords: Graphene, Defects, Electrical properties