Si monolayer growth on (√3×√3)R30° Ag-Ge reconstruction surface without Ag segregation.
Hsu1*, Chun Liang Lin2, Po-I Hsieh1, Wen-Chin Lin1, Tsu-Yi, Fu1
1Department of Physics, National Taiwan Normal University, Taipei, Taiwan
2Department of Advanced Materials Science, School of Frontier Sciences, University of Tokyo, Tokyo, Japan
* presenting author:Hung-Chang Hsu, email:hsiuta617@gmail.com
Using scanning tunneling microscopy (STM), we measured the formation of Si monolayer growing on Ge(111) substrate via the (√3×√3)R30° Ag-Ge reconstruction. The results showed that the Ag hip-hop effect, which causing Ag segregating on the top layer forming the √3 reconstruction, was reduced. The isolated Si monolayer grow with mixing √3 and 2×2 superstructure on the top layer and increase area by increasing substrate temperature from RT to 420 K then disappear at 620 K. The possible ball model of Si monolayer was demonstrated in the paper. The work provides a way to fabricate the Si monolayer on (√3×√3)R30° Ag-Ge reconstruction which differs to on Ag(111).


Keywords: Silicene, STM, 2D material