Depth Profiling Electronic and Structural Properties of CIGSSe-Based Thin Film Solar Cell
Pin-Jiun Wu1*, Ching-Yu Chiang2, Sheng-Wei Hsiao2
1Industrial Application Group, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
2Institute and Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
* presenting author:Pin-Jiun Wu, email:wu.pj@nsrrc.org.tw
High-efficiency Cu(In,Ga)(S,Se)₂ (CIGSSe) thin-film solar cells have attracted much interest as a source of renewable energy. The band gap of CIGSSe can be changed with the compositions of the In/Ga and S/Se ratios, which is controlled to improve solar cell efficiencies. The lattice constant, strain in the layer, and average grain size are also influenced by the composition of the chalcopyrite. By means of scanning photoemission microscopy, we can explore the depth-dependent element distribution and the band structure of the thickness-gradient CIGSSe solar cell device. The results can be elucidated by the thermodynamic reaction and the manufacturing process. To study the detailed crystalline structure of solar cell varied with depth, the grazing-incident X-ray diffraction was applied to analyze the two-dimensional patterns of the thickness-gradient sample, providing the strain profile and stoichiometric distribution within the CIGSSe absorber layer.


Keywords: CIGSSe solar cell, Scanning photoemission microscopy, Grazing incident X-ray diffraction