Probing induced defect on graphene by Raman spectroscopy
Jyun-Ting Chen1*, Wei-Huan Chiang1, Hung-Chieh Tsai1, Min-Chiang Chuang1, Chia-Hao Chen2, Wei-Yen Woon1
1Condensed matter physics laboratory. Department of physics, National Central University, Taoyuan, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
* presenting author:JYUN-TING CHEN, email:happytim012@gmail.com
Graphene, as a unique two-dimensional honeycomb lattice consisting sp2 bonded carbon atoms, has enormous potential in large number of applications due to its unique electronic and structural properties. However, graphene is a gapless material which limits the application in semiconductor industry. Therefore how to opening band gap by induction of structural defects and chemical functionalization is an important issue.
In this experiment, we focus on the structural defects and study the nature of defects in different condition. Scanning probe lithography (SPL) by atomic force microscope (AFM) enables us to make micro-sized defected patterns on graphene. Unlike normal SPL, which applied DC voltage to tip, we used a pulse as voltage source. This method provides wider tunable parameters such as pulse duration and frequency that allows us to fine-tune the formation of defects on graphene. Here, we adjusted the writing speed, pulse duration, and frequency to tune the properties of defect, which can be probed by micro-Raman spectroscopy (u-RS) in terms of type of defect and defect density.


Keywords: Graphene, defect, pulse, Scanning probe lithography, atomic force microscope