Tuning oxidation dynamics of graphene by scanning probe lithography
Yi-Zhe, Hong1*, Wei-Huan, Chiang1, Hung-Chieh Tsai1, Min-Chiang Chuang1, Chia-Hao Chen2, Wei-Yen Woon1
1condensed matter physics laboratory. Department of physics, National Central University, Taoyuan, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
* presenting author:Yi-Zhe Hong, email:a0981991625@gmail.com
Recently, graphene has attracted much attention because of its high electron mobility and high surface-to-volume ratio. With these advantages, graphene can be applied for a better electronic material. However, lacking of band gap makes it impossible to be a switch inside device. Therefore, how to open band gap on graphene becomes worth to study. Local anodic oxidation (LAO) is promising to induce defect at local position accuracy by scanning probe lithography (SPL). Here we study the structure and chemical bonding within micro scale local oxidation of graphene.
The LAO pattern is controlled by varied the chemical energy and exposure time with changing the applied voltage and writing speed respectively. Raman spectroscopy is measured in order to realize the graphene structure changing by the applied voltage. On the other hand, the chemical bond information was carried out by scanning photoelectron microscopy (SPEM) at Nation synchrotron radiation research center (NSRRC). The correlation between the complex structure of graphene and chemical bonding is realized with our experiment.


Keywords: Graphene, Scanning probe lithography, scanning photoelectron microscopy, local anodic oxidation