Patterning of reduced graphene oxide by scanning probe lithography
Lu-Lu,Song1*, Wei-Huan,Chiang1, Hung-Chein,Tsai1, Min-Chiang,Chuang1, Wei-Yen,Woon1
1physics, NCU, taoyuan, Taiwan
* presenting author:lulu song, email:cloverasll@gmail.com
Graphene is the two-dimensional crystalline form of carbon whose extraordinary electron mobility and other unique features hold great promise for nanoscale electronics and photonics.However, it is gapless inside the graphene band structure. In order to meet the needs of industry application requirement,how to fabricate large scale, gap opening graphene related material is an important issue. The reduced form of graphene oxide which has attracted much interest as a possible route for large-scale production can produce large-scale flexible conductors and create devices that require an band gap. Among the varies methods applied to reduce GO,lacking in structural recovery is always an obstacle to obtain pristine graphene.Therefore, by using scanning probe lithography (SPL),the micro-scale reduced area was accurately localized. Moreover we controlled the dose of reduction through adjusting the applied voltage between the probe and graphene oxide and the scanning rate of the probe.Contrasting the Raman spectroscopy before and after the reduction,the structural evolution has been revealed. And by x-ray photoelectron spectra(XPS),we have identified that we can adjust the nature of GO through SPL reducing.


Keywords: graphene oxide , scanning probe lithography, XPS