Origin and Thermal Quenching of 400 nm Emission from ZnO/Poly(N‐vinylcarbazole) Coaxial Nanocables
Shih-Shou LO1*
1光電系, 逢甲大學, 台中市, Taiwan
* presenting author:Shih-Shou LO, email:sslo@fcu.edu.tw
ZnO/Poly(N-vinylcarbazole) coaxial nanocables were fabricated, and their optical properties were studied using temperature-dependent photoluminescence (PL) over the temperatures at 10-300 K. A new peak at 400 nm was obtained at temperatures below 200 K. The luminescence mechanism of the 400 nm emission from ZnO/PVK coaxial nanocables is explained. By fitting the experimental data, four activation energies value EA1=4 meV, EA2=20 meV EA3=145 meV, and EA4=200 meV, were identified for the nonradiative mechanisms responsible for quenching the 400 nm emission. These activation energies values are assigned to the neutral shallow donor (acceptor) bound exciton in ZnO nanorods, activation energy of PVK (triplet state), activation energies of PVK(singlet state), and activation energy of N:ZnO, respectively. This study deepens understanding of the applications of single ZnO/PVK coaxial nanocable-based nanodevices.

Keywords: Nanocable, photoluminescence, thermal quchening