Numerical study with polarization effect of deep ultraviolet light-emitting diodes
Hui-Tzu Chang1*, Fang-Ming Chen2, Jih-Yuan Chang3, Ya-Hsuan Shih4, Yen-Kuang Kuo1,2, Man-Fang Huang2
1Department of Physics, National Changhua University of Education, Changhua, Taiwan
2Institute of Photonics, National Changhua University of Education, Changhua, Taiwan
3Center for Teacher Education, National Changhua University of Education, Changhua, Taiwan
4Department of Photonics, National Cheng Kung University, Tainan, Taiwan
* presenting author:Hui-Tzu Chang, email:cd12391020002000@yahoo.com.tw
Aluminum gallium nitride (AlGaN) has attracted significant attention for deep ultraviolet (DUV) light-emitting diodes (LEDs), and is positioned to replace conventional mercury-based light sources for water purification, bio-chemical detection, and sterilization. However, the effect of polarization is still an important issue for nitride-based light-emitting diodes. It has been reported that the efficiency property of deep ultraviolet light-emitting diodes is degenerated seriously with reversed or without polarization. In this work, the light output power-current (L-I) curves, current-voltage (I-V) curves, the energy band diagrams, and carrier concentration and distribution are discussed in detail. The simulation results show that the comparison of optical and electrical performance with different energy band structure under normal, reversed and without polarization.


Keywords: deep ultraviolet (DUV), AlGaN, light-emitting diodes, polarization effect, simulation