Electric Properties in ReS₂ Two-dimensional Nanostructures
C.H.Lin(林敬軒)1*, R.S.Chen(陳瑞山)1, Y.S.Huang(黃鶯聲)2
1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
2Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
* presenting author:Ching-Hsuan Lin, email:m10322604@mail.ntust.edu.tw
The electrical properties in the single-crystalline ReS2 two-dimensional (2D) nanostructures have been investigated. The single-crystalline quality and triclinic structure of the ReS2 crystals were confirmed by Raman scattering and X-ray diffraction (XRD) measurements. Focused-ion beam (FIB) technique was used to fabricate two-terminal nanoflake devices. A low contact resistance was achieved according to the transmission line method. The conductivity measurement shows an isotropic transport in the ab-plane. The conductivity along the b-axis is approximately one order of magnitude higher than that perpendicular to b-axis. In addition, a thickness-dependent conductivity along b-axis has also been observed. The conductivity value increases with a decrease in material thickness. Temperature-dependent measurement also indicates much lower carrier activation energy of the ReS2 nanoflakes compared to that of the bulks. These results imply a higher surface conductivity in this layer semiconductor.

Keywords: Rhenium disulphide , Layer semiconductor, Nanostructure, Electric property