Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy
尤碩廷1*, 羅奕凱1, 蔡振凱2, 施政宏1
1物理系, 中山大學, 高雄市, Taiwan
2電子工程系, 國立虎尾科技大學, 雲林縣, Taiwan
* presenting author:Shuo-Ting You, email:youshouting@gmail.com
We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface (101 ̅0) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.


Keywords: M-plane, GaN, microrod, MBE, ZnO