Interface formation and growth of InSb on the Ge(111) surface
Cho-Ying Lin1*, Ching-Wei Chang1, Deng-Sung Lin1
1Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:Cho-Ying Lin, email:lcy1029@gmail.com
The III-V compound semiconductors with high electron mobility and the small band gap, as these characteristics, InSb semiconductor is the best one. Due to these feature, InSb use to infrared detector, high-speed sensor. In these days, III-V semiconductor integrated on silicon have been attracted attention for III-V FinFET as low power and high speed application. However, direct growth of InSb on Si or Ge substrate are difficult (lattice mismatch ~15%) and much less has been reported. Several group reported the GaSb grow on Si(111), but it’s difficult to control the size of GaSb on Si(111). We found that InSb films is fastidious with the substrate. It’s difficult to grow flat thin InSb films on Ge(100) with low defects. During deposition, indium tends to form clusters even with post-anneal of the substrate. In contrast, InSb can grow well on the Ge(111) surface. The STM and XPS results after the flat and high quality InSb monolayer film has been grown on the Ge(111) surface by co-deposition of In and Sb. We found that the Sb like to form the first layer on top of Ge(111), then In layer forms on the Sb/Ge(111). We obtain similar results with alternating the In and Sb deposition. Therefore, we can control the InSb films with one layer, two layer, three layer accuracy.


Keywords: STM, Core Level Spectra, InSb, Ge(111)