ZnSe Nanoparticle Fabrication by Femtosecond Laser Ablation
Yu-Ling Chen1*, Ya-Hsin Tseng1, Hsuan-I Wang1, Chih-Wei Luo1, Hsiu-Pen Lin2, Yaw-Kuen Li2
1Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
2Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan
* presenting author:Yu-Ling Chen, email:k123182@gmail.com
The freestanding hexagonal ZnSe nanoparticles have been successfully generated by femtosecond pulse laser ablation [1]. After the wafer scanned by femtosecond pulse laser, a large amount of ZnSe nanoparticles with fluence-dependent diameter between 10 to 120 nm was produced on the wafer surface. With high peak power, the structural phase transition from cubic phase to hexagonal phase in ZnSe nanoperticles can be achieved by the photo-pressure. Additionally, the room-temperature photoluminescence (PL) spectra of the ZnSe nanoparticles showed a near-band-edge emission peak in the range of 450-470 nm and a defect-related emission peak in the range of 600-650 nm. Additionally, ZnSe nanoparticles produced in this study could be further applied to the biological image technology as a new biological target.

[1] Hsuan I Wang, Wei Tsung Tang, Li Wei Liao, Pei Shan Tseng, Chih-Wei Luo, Chu Shou Yang, and Takayoshi Kobayashi, Journal of Nanomaterials 2012, 278364 (2012)


Keywords: ZnSe nanoparticles, femtosecond laser ablation, photoluminescence