Sb₂SeTe₂拓樸絕緣體的Subnikov–de Haas振盪
Shao-Yu Lin1*, Jui-Feng Chen1, Shiu-Ming Huang1, Shih-Hsun Yu2, Mitch Chou2
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
2Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
* presenting author:Shao-Yu Lin, email:bleak0173@gmail.com
我們量測Sb₂SeTe₂拓樸絕緣體的低溫及高磁場下的電性傳輸,霍爾量測結果顯示Sb₂SeTe₂主要載子為電洞,在溫度2-10K,磁場7-9T間我們觀測到二維系統的Shubnikov–de Haas(SdH)振盪現象,由Landau-level fan diagram 顯示Berry phase約為0.5。進一步分析結果電性量測得出的KF費米波向量與ARPES的量測結果一致。


Keywords: Topological insulator, Subnikov–de Haas (SdH)