拓樸絕緣體Sb₂SeTe₂的線性磁阻
Jui-Feng Chen1*, Shao-Yu Lin1, Shiu-Ming Huang1, Shih-Hsun Yu2, Mitch Chou2
1Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
2Department of Material and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
* presenting author:Jui Feng Chen, email:briangod2@hotmail.com
我們量測Sb₂SeTe₂拓樸絕緣體的電性傳輸性質,實驗結果顯示在外加磁場達到9T以及在10K~250K的溫度區間內,磁阻呈現非飽和線性趨勢。另外,實驗結果發現線性磁阻的臨界磁場(B*)與線性磁阻(MR)的斜率皆隨溫度變化。進一步的研究發現線性磁阻(MR)的斜率與載子移動率(mobility)成正比,臨界磁場(B*)與載子移動率(mobility)成反比,此現象符合Parish-Littlewood 的理論模型預測。


Keywords: topological insulator, magnetoresistance